1. Ph.D. in Material Science, Department of Physics & Astrophysics, University of Delhi, India in 2014.

     Thesis: Structure, electrical and defect studies of tellurium based chalcogenide glasses for Phase Change Memory (PCM) Applications.

2.  Masters in Science, Physics (specialization with Electronics), Department of Physics & Astrophysics, University of Delhi with 69% in 2005.

3.  Bachelors in Physics, Miranda House, University of Delhi with 71% in 2003.

Material Science

Research highlights:  Ph.D. in Material Science (thesis submitted in May 2013) from the Department of Physics & Astrophysics, University of Delhi, Delhi-110007, India, under the supervision of Dr. S. Murugavel.

 Research topic:  “Structure, electrical and defect studies of tellurium based chalcogenide glasses for phase change memory (PCM) applications”.  

Problems undertaken during research:  
Evidence of defective structural units in crystalline phase of phase change material GeTe.
Estimation of defect size/void in Ge-Te based amorphous and crystalline compositions.
Distinctinction between memory and threshold type switching on Al-As-Te system.

Origin of phase change transformation in Ge-Sb-Te based PCM materials. Various chalcogenide compositions studied: Ge-Te, Ge-Sb-Te, Al-As-Te, Ge-Pb-Se, Si-Sb- Te etc.

Physics & Electronics

1. Structural study on amorphous and crystalline state of Phase change material,

Manisha Upadhyay, S. Murugavel, M. Anbarasu and T. R. Ravindran, J. Appl. Phys. 110 (2011) 083711, ISSN: 0021-8979, Impact factor: 2.22.

2.  A.C. Conduction in amorphous semiconductors, Sevi Murugavel and Manisha Upadhyay, J. Indian Institute of Science 91 (2011) 303-317. ISSN: 0970-4140.

3. Correlation between crystallization behavior, electrical switching and local atomic structure of Ge-Te glasses, Manisha Upadhyay and Sevi Murugavel, J. Non-Cryst. Solids 368 (2013) 34-39. ISSN: 0022-3093, Impact factor: 1.597.

4. Thermal, structural and electrical studies on memory and threshold switching chalcogenide glasses, Manisha Upadhyay and Sevi Murugavel, National Symposium on Materials and Processing-2012 (MAP-2012), PG & GC 11, (2012).

5. Experimental evidence for presence of voids in phase change memory material, Manisha Upadhyay, S. Abhaya, S. Murugavel and G. Amarendra, RSC Advances, 4 (2014) 3691. ISSN 2046-2069, Impact factor: 2.562.

6. Polaronic Behavior of Carrier-Type Reversal in Pb Modified Ge-Se Glasses, G. Kalra, M. Upadhyay, Y. Sharma, S. Abhaya, S. Murugavel, G. Amarendra, Physical Chemistry Chemical Physics, Submitted, ISSN 1463-9076, Impact factor: 4.493.

7. Evidence for an intermediate phase in Ge-Te glasses, Manisha Upadhyay and Sevi Murugavel, Physical Chemistry Chemical Physics, Submitted, ISSN 1463-9076, Impact factor: 4.493.

1. International Conference and Workshop on Nanostructured Ceramics and Other Nanomaterials (ICWNCN-2012), University of Delhi, INDIA.

2. Material Science and Processing (MAP-2012), Bhabha Atomic Research Centre (BARC), Mumbai, INDIA.

3. National Seminar on Frontiers of Condensed Matter Physics (NSFCMP-2013), University of Delhi, INDIA.

4. Workshop on active learning integrating hands on experiments and multimedia resources held at Miranda House, University of Delhi from 7^th-8^th October 2013.

5. Orientation program for foundation course- Science and life held on 19^th August 2013 at South campus, University of Delhi.

6. Advanced Workshop on Broad Band Dielectric Spectroscopy, jointly organized by the University of Delhi and Novocontrol Technologies, 17^th -18^th January, 2014.

7. Workshop on Cosmology, Astrophysics and Computation at Shivaji College, University of Delhi,12^th March 2015.

Convener of FEE CONCESSION & BOOK-AID COMMITTEE at ARSD College (Presently).

Nil

FELLOWSHIPS AND AWARDS

• Council for Scientific and Industrial Research (CSIR) JRF/SRF-NET-2007.
• Graduate Aptitude Test in Engineering (GATE-2007).

SCIENTIFIC PROJECTS UNDERTAKEN

• Measurement of wind speed and direction using electronic circuit ensembled with tachometer (during post-graduation.)
• Application of piezo-electric effect to control the output of 8255A connected with microprocessor using piezo-buzzer (during graduation).